US Patent Issued to Yangtze Memory Technologies on Oct. 20 for "Operation method for memory, memory, memory system and electronic system for multi-stage program verification" (Chinese Inventor)

Posted On: 2026-10-21

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,697, issued on Oct. 20, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Operation method for memory, memory, memory s... Read More

US Patent Issued to SK hynix on Oct. 20 for "Memory device performing program operation and method of operating the same" (South Korean Inventor)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,698, issued on Oct. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device performing program operation and method of o... Read More

US Patent Issued to Sandisk Technologies on Oct. 20 for "Non-volatile memory with smart tail detection read mode without erase time penalty" (Chinese Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,699, issued on Oct. 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Non-volatile memory with smart tail detection read m... Read More

US Patent Issued to SK hynix on Oct. 20 for "Memory device and method of operating the same" (South Korean Inventor)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,700, issued on Oct. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of operating the same" was invent... Read More

US Patent Issued to Canon on Oct. 20 for "Semiconductor device and inkjet printing element substrate" (Japanese Inventor)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,701, issued on Oct. 20, was assigned to Canon K.K. (Tokyo). "Semiconductor device and inkjet printing element substrate" was invented by To... Read More

US Patent Issued to TDK on Oct. 20 for "Magnetic domain wall motion element, magnetic recording array, and magnetic memory" (Japanese Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,702, issued on Oct. 20, was assigned to TDK Corp. (Tokyo). "Magnetic domain wall motion element, magnetic recording array, and magnetic mem... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TSING HUA UNIVERSITY on Oct. 20 for "Memory device and operating method thereof" (Taiwanese Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,703, issued on Oct. 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TSING HUA UNIVERSITY ... Read More

US Patent Issued to Micron Technology on Oct. 20 for "Recycled fine granularity counter-based RAS chain" (Idaho Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,704, issued on Oct. 20, was assigned to Micron Technology Inc. (Boise, Idaho). "Recycled fine granularity counter-based RAS chain" was inve... Read More

US Patent Issued to QUALCOMM on Oct. 20 for "Memory mirror sequencing for reduced latency in memory patching" (Indian Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,705, issued on Oct. 20, was assigned to QUALCOMM Inc. (San Diego). "Memory mirror sequencing for reduced latency in memory patching" was in... Read More

US Patent Issued to MimirIP on Oct. 20 for "Memory, memory system, operation method of the memory, and operation of the memory system" (South Korean Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,706, issued on Oct. 20, was assigned to MimirIP LLC (Dallas). "Memory, memory system, operation method of the memory, and operation of the ... Read More

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US Patent Issued to Yangtze Memory Technologies on Oct. 20 for "Operation method for memory, memory, memory system and electronic system for multi-stage program verification" (Chinese Inventor)

US Patent Issued to SK hynix on Oct. 20 for "Memory device performing program operation and method of operating the same" (South Korean Inventor)

US Patent Issued to Sandisk Technologies on Oct. 20 for "Non-volatile memory with smart tail detection read mode without erase time penalty" (Chinese Inventors)

US Patent Issued to SK hynix on Oct. 20 for "Memory device and method of operating the same" (South Korean Inventor)

US Patent Issued to Canon on Oct. 20 for "Semiconductor device and inkjet printing element substrate" (Japanese Inventor)

US Patent Issued to TDK on Oct. 20 for "Magnetic domain wall motion element, magnetic recording array, and magnetic memory" (Japanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TSING HUA UNIVERSITY on Oct. 20 for "Memory device and operating method thereof" (Taiwanese Inventors)

US Patent Issued to Micron Technology on Oct. 20 for "Recycled fine granularity counter-based RAS chain" (Idaho Inventors)

US Patent Issued to QUALCOMM on Oct. 20 for "Memory mirror sequencing for reduced latency in memory patching" (Indian Inventors)

US Patent Issued to MimirIP on Oct. 20 for "Memory, memory system, operation method of the memory, and operation of the memory system" (South Korean Inventors)